Papers - All papers - Defect dat@base http://kc04.kc.tsukuba.ac.jp/div-media/defect/index.php?q=&material=&method=&defect=&sb=u Papers - Defect dat@base 2010-07-20T16:50:39+09:00 Deep-Level Transient Spectroscopy and Photoluminescence Studies of Formation and Depth Profiles of Copper Centers in Silicon Crystals Diffused with Dilute Copper http://dx.doi.org/10.1143/JJAP.49.071302 Minoru Nakamura and Susumu Murakami, Jpn. J. Appl. Phys. 49, 071302 (2010) 2010-07-20T16:50:39+09:00 NBTI degradation: From physical mechanisms to modelling http://dx.doi.org/10.1016/j.microrel.2005.02.001 , Microelectron. Reliability 46, 1 (2006) 2010-06-14T17:59:23+09:00 Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates http://kc04.kc.tsukuba.ac.jp/div-media/defect/index.php?q=&material=&method=&defect=&sb=u&id=4551#4551 , IEEE Electron Device Lett. 25, 153 (2004) 2010-06-14T17:53:11+09:00 Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition http://dx.doi.org/10.1063/1.1537053 , Appl. Phys. Lett. 82, 269 (2003) 2010-06-14T17:48:09+09:00 Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors http://dx.doi.org/10.1063/1.1604480 , Appl. Phys. Lett. 83, 1647 (2003) 2010-06-14T17:43:26+09:00 A comprehensive model of PMOS NBTI degradation http://dx.doi.org/10.1016/j.microrel.2004.03.019 , Microelectron. Reliability 45, 71 (2005) 2010-06-14T17:37:27+09:00 Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing http://dx.doi.org/10.1063/1.1567461 , J. Appl. Phys. 94, 1 (2003) 2010-06-14T17:31:36+09:00 The effect of interfacial layer properties on the performance of Hf-based gate stack devices http://dx.doi.org/10.1063/1.2362905 G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. Ryan, J. Appl. Phys. 100, 094108 (2006) 2010-06-14T17:19:46+09:00 Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes http://dx.doi.org/10.1063/1.1508809 Ziyuan Liu, Appl. Phys. Lett. 81, 2397-2399 (2002) 2010-06-14T17:02:53+09:00 Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum" http://dx.doi.org/10.1063/1.126776 Tetsuya D. Mishima and Patrick M. Lenahan, Appl. Phys. Lett. 76, 3771-3773 (2000) 2010-06-14T16:59:56+09:00 Density of states of Pb1 Si/SiO2 interface trap centers http://dx.doi.org/10.1063/1.1461053 J. P. Campbell and P. M. Lenahan, Appl. Phys. Lett. 80, 1945-1947 (2002) 2010-06-14T16:57:34+09:00 Direct observation of the structure of defect centers involved in the negative bias temperature instability http://dx.doi.org/10.1063/1.2131197 J. P. Campbell and P. M. Lenahan, Appl. Phys. Lett. 87, 204106 (2005) 2010-06-14T16:55:05+09:00 Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination http://dx.doi.org/10.1063/1.2715141 , Appl. Phys. Lett. 90, 123502 (2007) 2010-06-14T16:47:29+09:00 Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices http://dx.doi.org/10.1063/1.2790776 J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. Krishnan, Appl. Phys. Lett. 91, 133507 (2007) 2010-06-14T16:37:32+09:00 Nitridation effects on Pb center structures at SiO2/Si„(100) interfaces http://dx.doi.org/10.1063/1.1687034 , J. Appl. Phys. 95, 4096 (2004) 2010-06-14T16:26:18+09:00 Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems http://dx.doi.org//j.microrel.2004.02.017 , Microelectron. Reliability 45, 57 (2005) 2010-06-14T16:05:58+09:00 Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics http://dx.doi.org/10.1143/JJAP.40.2840 , Jpn. J. Appl. Phys. 40, 2840 (2001) 2010-06-14T15:52:34+09:00 Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems http://dx.doi.org/10.1063/1.1578535 Shinji Fujieda, Yoshinao Miura, and Motofumi Saitoh, Appl. Phys. Lett. 82, 3677-3679 (2003) 2010-06-14T15:41:46+09:00 Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers http://dx.doi.org/10.1143/JJAP.49.05FE02 Kiyoteru Kobayashi and Taketoshi Ide, Jpn. J. Appl. Phys. 49, 05FE02 (2010) 2010-05-20T13:34:25+09:00 Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy http://dx.doi.org/10.1143/JJAP.49.051001 Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi Yamaguchi, Jpn. J. Appl. Phys. 49, 051001 (2010) 2010-05-20T13:34:25+09:00 Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy http://dx.doi.org/10.1143/APEX.3.051002 Boussairi Bouzazi, Hidetoshi Suzuki, Nobuaki Kojima, Yoshio Ohshita, and Masafumi Yamaguchi, Appl. Phys. Express 3, 051002 (2010) 2010-05-03T02:17:55+09:00 High-Quality p-Type ZnO Films Grown by Co-Doping of N and Te on Zn-Face ZnO Substrates http://dx.doi.org/10.1143/APEX.3.031103 Seunghwan Park, Tsutomu Minegishi, Dongcheol Oh, Hyunjae Lee, Toshinori Taishi, Jinsub Park, Mina Jung, Jiho Chang, Inho Im, Junseok Ha, Soonku Hong, Ichiro Yonenaga, Toyohiro Chikyow, and Takafumi Yao, Appl. Phys. Express 3, 031103 (2010) 2010-03-15T01:28:10+09:00 ESR-resonance in doped GaAs and GaP http://dx.doi.org/doi:10.1016/0038-1098(69)90084-2 S. Haraldson , C-G Ribbing, Solid State Commun. 7, ii-iii (1969) 2010-02-22T16:33:11+09:00 Identification of Intrinsic Interstitial Complexes in Silicon by EPR http://kc04.kc.tsukuba.ac.jp/div-media/defect/index.php?q=&material=&method=&defect=&sb=u&id=1657#1657 G. O. Tozhibaev, Sh. M. Makhkamov, Yu. V. Gorelkinski?, N. A. Tursunov, M. A. Makhov., Phys. Solid State 38, 549 (1996) 2010-02-22T16:21:40+09:00 Electron paramagnetic resonance of defects with metastable properties in crystalline GaN http://dx.doi.org/10.1134/1.1130626 P. G. Baranov, I. V. Il'in, E. N. Mokhov, V. A. Khramtsov, Phys. Solid State 40, 1648 (1998) 2010-02-22T16:14:47+09:00 Electric-Field-Enhanced Thermal Emission from Osmium-Related http://www.scientific.net/3-908158-02-8/73/ M. Zafar Iqbal, A. Majid, A. Dadgar and D. Bimberg, Advances in Science and Technology 46, 73 (2006) , Trans Tech Publications, Switzerland 2010-02-22T15:58:26+09:00 A Cryogenically Coolable Microwave Limiter http://dx.doi.org/doi:10.1006/jmre.1998.1659 George A. Rinard, Richard W. Quine , Gareth R. Eaton, J. Magn. Reson. 136, 207-210 (1999) 2010-02-22T15:56:47+09:00 Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films http://dx.doi.org/10.1006/jmre.1998.1659 A. A. Lebedev, A. M. Ivanov, N. B. Strokan, Semiconductors 38, 125 (2004) 2010-02-22T15:55:55+09:00 ESR-resonance in doped GaAs and GaP http://dx.doi.org/doi:10.1016/0022-3697(69)90066-3 S. Haraldson , C-G Ribbing, Solid State Commun. 7, ⅱ‐ⅲ (1969) 2010-02-22T15:46:32+09:00 DISTRIBUTION OF SUBSTITUTIONAL NITROGEN DONORS IN SYNTHETIC DIAMONDS http://dx.doi.org/10.1038/210692a0 M. J. A. Smith, B. R. Angel, R. G. Emmons, Nature 210, 692 (1966) 2010-02-22T15:21:20+09:00 DIAMONDS CONTAINING CONTROLLABLE IMPURITY CONCENTRATIONS http://dx.doi.org/10.1038/194829a0 C. M. Huggins, P. Cannon, Nature 194, 829 (1962) 2010-02-22T15:20:16+09:00 PARAMAGNETIC RESONANCE IN NEUTRON-IRRADIATED DIAMOND AND SMOKY QUARITZ http://dx.doi.org/10.1038/173439a0 Dr. J. H. E. Griffiths, J. Owen, I. M. Ward, Nature 173, 439 (1954) 2010-02-22T15:19:34+09:00 Electron Spin Resonance in Neutron-irradiated Diamond http://dx.doi.org/10.1038/198981b0 E. A. Faulkner, E. W. J. Mitchell, P. W. Whippey, Nature 198, 981 (1963) 2010-02-22T14:46:58+09:00 Enhanced Ferromagnetism and Tunable Saturation Magnetization of Mn/C Codoped GaN Nanostructures Synthesized by Carbothermal Nitridation http://dx.doi.org/10.1021/ja807030v Zeyan Wang, Baibiao Huang, Lin Yu, Ying Dai, Peng Wang, Xiaoyan Qin, Xiaoyang Zhang, Jiyong Wei, Jie Zhan, Xiangyang Jing, Haixia Liu, and Myung-Hwan Whangbo, J.Am.Chem.Soc. 130, 48 (2008) , ACS 2010-02-21T18:19:06+09:00 Charge States of Interstitial Defects in Implanted Silicon and Their Annealing Temperatures http://dx.doi.org/10.1002/pssb.2221890131 M. Jadan, N. I. Berezhnov, A. R. Chelyadinskii., phys. stat. sol. (b) 189, K1 (1995) 2010-02-21T18:15:47+09:00 Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR http://kc04.kc.tsukuba.ac.jp/div-media/defect/index.php?q=&material=&method=&defect=&sb=u&id=4495#4495 , Phys.Rev.Lett. 79, 1507 (1997) 2010-02-15T06:53:09+09:00 Electron paramagnetic resonance of hydrogen in silicon http://kc04.kc.tsukuba.ac.jp/div-media/defect/index.php?q=&material=&method=&defect=&sb=u&id=4494#4494 Yu.V.Gorelkinskii, N.N.Nevinnyi, Physica B 170, 155 (1991) 2010-02-15T06:53:09+09:00 An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon http://kc04.kc.tsukuba.ac.jp/div-media/defect/index.php?q=&material=&method=&defect=&sb=u&id=4493#4493 Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun and Qin Guo-gang, Solid State Commun. 61, 199 (1987) 2010-02-15T06:53:09+09:00 Determination of the Zero-Field Splitting of Iron-Boron Pairs in Silicon http://dx.doi.org/10.1002/pssb.2221050247 W. Gehlhoff, K. H. Segsa, C. Meyer., phys. stat. sol. (b) 105, K91 (1981) 2010-02-14T17:13:07+09:00 Anisotropic Broadening of Linewidth in the EPR Spectrum of Fe0 in Silicon http://dx.doi.org/10.1002/pssa.2210410149 W. Gehlhoff, K. H. Segsa., phys. stat. sol. (a) 41, K21 (1977) 2010-02-14T17:02:09+09:00 Dynamic Interchange among Three States of Phosphorus (4+) in ?-Quartz. 2. http://dx.doi.org/10.1021/j150666a029 Y. Uchida, J. Isoya, J. A. Weil, J. Phys. Chem. 88, 5255-5260 (1984) 2010-02-14T16:14:29+09:00 Isothermal Capacitance Transient Spectroscopy http://jjap.ipap.jp/link?JJAPS/20S1/261/ Hideyo Okushi and Yozo Tokumaru , Jpn. J. Appl. Phys. 20(Suppl.20-1), 261 (1981) 2010-02-14T16:01:28+09:00 Electron Spin Relaxation Time of Phosphorus-Doped Silicon http://dx.doi.org/10.1143/JPSJ.41.711 H. Nagashima, H. Yamazaki., J. Phys. Soc. Jpn. 41, 711 (1976) 2010-02-14T15:56:39+09:00 Synthesis and Characterization of Pt/Co–O/Pt Trilayer Exhibiting Large Reproducible Resistance Switching http://dx.doi.org/10.1143/JJAP.46.L57 Hisashi Shima, Fumiyoshi Takano, Yukio Tamai, Hiro Akinaga, and Isao H. Inoue., Jpn. J. Appl. Phys. 46, L57 (2007) 2010-02-14T15:44:53+09:00 Deep levels in osmium doped p-type GaAs grown by metal organic chemical vapor deposition http://dx.doi.org/10.1063/1.1994036 M. Zafar Iqbal, A. Majid, A. Dadgar, and D. Bimberg, AIP Conf. Proc. 772, 147 (2005) , American Institute of Physics 2010-02-14T15:42:29+09:00 Deep levels in Ruthenium doped p-type MOCVD GaAs http://dx.doi.org/10.1063/1.1994034 A. Majid, M. Zafar Iqbal, A. Dadgar, and D. Bimberg, AIP Conf. Proc. 772, 143 (2005) , American Institute of Physics 2010-02-14T15:40:29+09:00 Electron Spin Resonance Spectra associated with Nitrogen in Diamonds http://dx.doi.org/10.1038/2101037a0 H. J. Bower, M. C. R. Symons, Nature 210, 1037 (1966) 2010-02-08T16:33:32+09:00 Depth Distribution of Point Defects in Si Bombarded by High-Energy N5+ and Si5+ Ions http://dx.doi.org/10.1134/1.1130270 A. V. Dvurechenski?, A. A. Karanovich, R. Grtzschel, F. Herrmann, R. Kegler, A. V. Rybin., Phys. Solid State 40, 195 (1998) 2010-02-06T11:07:59+09:00 Incorporation of cobalt into ZnO nanoclusters http://dx.doi.org/10.1016/j.msec.2005.07.007 Igor Ozerov, Françoise Chabre and Wladimir Marine, Mater. Sci. Eng. C 25, 614-617 (2005) 2010-02-06T11:01:29+09:00 Effect of fluorine on boron thermal diffusion in the presence of point defects http://dx.doi.org/10.1016/j/mseb.2005.08.101 M.N.Kham and H.A.W.El Mubared and J.M.Bonar and P.Ashuburn, Mater. Sci. Eng. B 124-125, 192 (2005) 2010-02-06T10:58:53+09:00